Cu deposition using a permanent magnet electron cyclotron resonance microwave plasma source

High rate deposition of ta-C:H using an electron cyclotron wave resonance plasma source

A compact electron cyclotron wave resonance (ECWR) source has been developed for the high rate deposition of hydrogenated tetrahedral amorphous carbon (ta-C:H). The ECWR provides growth rates of up to 1.5 nm/s over a 4-inch diameter and an independent control of the deposition rate and ion energy. The ta-C:H was deposited using acetylene as the source gas and was characterized as having an sp c...

Plasma expansion from a dielectric electron cyclotron resonance source

The boundary conditions in an electron cyclotron resonance (ECR) source have been modified to mimic the operating conditions where current-free double-layers (DLs) have been recently measured in rf helicon plasmas. The plasma is heated or generated by the ECR at 875 G inside a dielectric source tube, and expands into a grounded diffusion chamber (terminated by a glass plate) by a rapidly decrea...

Electron Cyclotron Resonance Ion Source

Electron Cyclotron Resonance Ion Source

Electron Cyclotron Resonance Ion Source